The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2011

Filed:

Jun. 18, 2009
Applicants:

Jae-hun Jeong, Hwaseong-si, KR;

Soon-moon Jung, Seongnam-si, KR;

Han-soo Kim, Suwon-si, KR;

Jae-hoon Jang, Seongnam-si, KR;

Inventors:

Jae-hun Jeong, Hwaseong-si, KR;

Soon-moon Jung, Seongnam-si, KR;

Han-soo Kim, Suwon-si, KR;

Jae-hoon Jang, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory device includes first and second strings memory cell transistors, related first and second word lines respectively connected to gates of the first string memory cell transistors, wherein respective first and second word lines are connected to commonly receive a bias voltage. The non-volatile memory device also includes dummy cell transistors connected to the first and second strings, and first and second dummy word lines configured to receive different bias voltages.


Find Patent Forward Citations

Loading…