Kyoto, Japan

Shinya Takado

This inventor holds 17 USPTO granted patents and 11 published patent applications. Top assignees: Rohm Co., Ltd., Rohm Gmbh. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shinya Takado. Retrieved from https://idiyas.com/inventor/shinya-takado

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 82.4

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 44(Granted Patents)


Location History:

  • Ukyo-ku Kyoto, JP (2022)
  • Kyoto, JP (2013 - 2024)

Company Filing History:


Years Active: 2013-2026

Loading Chart...
17 patents (USPTO):Explore Patents

Title: Shinya Takado: Innovator in Nitride Semiconductor Technology

Introduction

Shinya Takado, a prominent inventor based in Kyoto, Japan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 15 patents, his work focuses on nitride semiconductor devices, which play a crucial role in advancing electronics and energy efficiency.

Latest Patents

Among his latest innovations are two notable patents for nitride semiconductor devices. The first patent describes a device that includes a first nitride semiconductor layer serving as an electron transit layer, followed by a second nitride semiconductor layer with a larger bandgap, functioning as an electron supply layer. The design incorporates a gate portion formed on the second layer, featuring a third nitride semiconductor layer shaped as a ridge. This layer contains an acceptor-type impurity and is capped with a gate electrode, all with precise specifications for thickness exceeding 100 nm.

The second patent also outlines a nitride semiconductor device, similarly structured with a first semiconductor layer and a second semiconductor layer, but it includes a distinct configuration for the gate portion. This advancement features a first and second semiconductor gate layer crafted from nitride materials, optimizing the Schottky junction with enhanced efficiency.

Career Highlights

Shinya Takado's career is marked by his association with Rohm Co., Ltd., a key player in semiconductor technology. His inventive spirit demonstrates a commitment to enhancing device performance and developing next-generation applications.

Collaborations

Throughout his career, Takado has collaborated with notable colleagues such as Norikazu Ito and Atsushi Yamaguchi. Their teamwork has contributed to the advancement of technology in their field, fostering innovation and excellence.

Conclusion

As an inventor, Shinya Takado continues to shape the future of nitride semiconductors through his groundbreaking patents. His work not only reflects his expertise but also highlights the collaborative efforts that drive progress in semiconductor technology. Takado's contributions are sure to leave a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…