The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Nov. 15, 2011
Shinya Takado, Kyoto, JP;
Norikazu Ito, Kyoto, JP;
Atsushi Yamaguchi, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A nitride semiconductor element includes a Si substrate; a buffer layer including (a) an AlN layer formed on a primary surface of the Si substrate; and (b) an AlGaN deposit layer formed by laminating multiple AlGaN layers on the AlN layer and having a total thickness ranging from 100 nm to 500 nm; a GaN electron transfer layer formed on the AlGaN deposit layer and having a thickness ranging from 500 nm to 2000 nm provided that the GaN electron transfer layer is thicker than the AlGaN deposit layer; and an AlGaN electron supply layer formed on the GaN electron transfer layer, wherein the AlGaN deposit layer includes an AlGaN layer that is provided closer to the AlN layer and has an Al component that ranges from about 40% to about 60%, and a reference AlGaN layer that has an Al component (%) that is lower than that of the AlGaN layer.