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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10804384 B1

PDFFull Text
Date of Patent:
Oct. 13, 2020

Filed:

Dec. 26, 2018

Semiconductor device and manufacturing method thereof

Applicant:

Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;

Inventors:

Kazuya Nagase, Kyoto, JP;

Shinya Takado, Kyoto, JP;

Minoru Akutsu, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

Alexander G Ghyka

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 21/306 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/30612 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/404 (2013.01); H01L 29/42364 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66462 (2013.01); H01L 21/02178 (2013.01); H01L 21/02241 (2013.01); H01L 21/02252 (2013.01); H01L 21/28264 (2013.01); H01L 21/31111 (2013.01);
Abstract

A semiconductor device includes: a back barrier layer containing AlGaN (0<X≤1); an electron transit layer containing AlInGaN (0≤a+b≤1) and formed on the back barrier layer; a top barrier layer containing AlGaN (0<Y≤1) and formed on the electron transit layer; an electron supply layer containing AlGaN (0<Z≤1) and formed on the top barrier layer, the electron supply layer having an opening to expose the top barrier layer; a two-dimensional electron gas region formed in an area of a surface layer portion of the electron transit layer, the area opposing the electron supply layer with the top barrier layer interposed between the electron supply layer and the area; a gate insulating layer formed in the opening of the electron supply layer; and a gate electrode layer formed on the gate insulating layer and opposing the electron transit layer with the gate insulating layer interposed therebetween.

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