The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Jan. 15, 2020
Rohm Co., Ltd., Kyoto, JP;
Hirotaka Otake, Kyoto, JP;
Shinya Takado, Kyoto, JP;
Taketoshi Tanaka, Kyoto, JP;
Norikazu Ito, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A nitride semiconductor deviceincludes a first nitride semiconductor layerthat constitutes an electron transit layer, a second nitride semiconductor layerthat is formed on the first nitride semiconductor layer, is larger in bandgap than the first nitride semiconductor layer, and constitutes an electron supply layer, and a gate portionthat is formed on the second nitride semiconductor layer. The gate portionincludes a first semiconductor gate layerof a ridge shape that is disposed on the second nitride semiconductor layerand is constituted of a nitride semiconductor containing an acceptor type impurity, a second semiconductor gate layerthat is formed on the first semiconductor gate layerand is constituted of a nitride semiconductor with a larger bandgap than the first semiconductor gate layer, and a gate electrodethat is formed on the second semiconductor gate layerand is in Schottky junction with the second semiconductor gate layer