The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Mar. 06, 2020
Rohm Co., Ltd., Kyoto, JP;
Hirotaka Otake, Kyoto, JP;
Kentaro Chikamatsu, Kyoto, JP;
Shinya Takado, Kyoto, JP;
Kazuya Nagase, Kyoto, JP;
ROHM CO. LTD., Kyoto, JP;
Abstract
A nitride semiconductor deviceincludes a first nitride semiconductor layerthat constitutes an electron transit layer, a second nitride semiconductor layerthat is formed on the first nitride semiconductor layer and constitutes an electron supply layer, and a gate portionthat is formed on the second nitride semiconductor layer. The gate portionincludes a semiconductor gate layerof a ridge shape that is formed on the second nitride semiconductor layer and is constituted of a nitride semiconductor containing an acceptor type impurity and a gate electrodethat is formed on the semiconductor gate layer. The semiconductor gate layer is constituted of a gate layer main body portionthat is formed on the second nitride semiconductor layer and an upper protruding portionthat is formed on a width intermediate portion of an upper surface of the gate layer main body portion, and the gate electrode is formed on a top surface of the upper protruding portion.