The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Oct. 07, 2021
Rohm Co., Ltd., Kyoto, JP;
Hirotaka Otake, Kyoto, JP;
Manabu Yanagihara, Kyoto, JP;
Kazuya Nagase, Kyoto, JP;
Shinya Takado, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A nitride semiconductor device includes a source electrode that is in contact with a second nitride semiconductor layer via a first opening portion and with which a portion is formed above a passivation film and a drain electrode that is in contact with the second nitride semiconductor layer via a second opening portion and with which a portion is formed above the passivation film such as to oppose the source electrode across a ridge portion, and the third nitride semiconductor layer has, between a ridge portion side end of the first opening portion and a first opening portion end of the ridge portion and/or between a ridge portion side end of the drain electrode and a second opening portion end of the ridge portion, an extension portion that extends outward from a portion below a thickness intermediate position of at least one side surface of the ridge portion.