The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Jan. 12, 2018
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventors:
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 23/495 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 29/15 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02499 (2013.01); H01L 21/02505 (2013.01); H01L 21/02579 (2013.01); H01L 21/4825 (2013.01); H01L 21/565 (2013.01); H01L 23/3114 (2013.01); H01L 23/4952 (2013.01); H01L 23/49562 (2013.01); H01L 29/045 (2013.01); H01L 29/154 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/41758 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7784 (2013.01); H01L 29/7787 (2013.01); H01L 24/06 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/451 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/49111 (2013.01); H01L 2924/01012 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/12032 (2013.01);
Abstract
A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device design, and a nitride semiconductor element package with excellent voltage tolerance performance and reliability. On a substrate, a buffer layer including an AlN layer, a first AlGaN layer and a second AlGaN layer is formed. On the buffer layer, an element action layer including a GaN electron transfer layer and an AlGaN electron supply layer is formed. Thus, an HEMT element is constituted.