The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Jan. 23, 2020
Rohm Co., Ltd., Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A nitride semiconductor deviceincludes a first nitride semiconductor layerthat constitutes an electron transit layer, a second nitride semiconductor layerthat is formed on the first nitride semiconductor layer and constitutes an electron supply layer, a nitride semiconductor gate layerthat is disposed on the second nitride semiconductor layer, has a ridge portionA at least at a portion thereof, and contains an acceptor type impurity, a gate electrodethat is disposed at least on the ridge portion of the nitride semiconductor gate layer, a source electrodethat is disposed on the second nitride semiconductor layer and has a source principal electrode portionA parallel to the ridge portion, and a drain electrodethat is disposed on the second nitride semiconductor layer and has a drain principal electrode portionA parallel to the ridge portion. A length direction of the ridge portion is a [110] direction of a semiconductor crystal structure that constitutes the second nitride semiconductor layer.