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For the Inventor, By the Inventor

Tokyo, Japan

Shigetaka Kumashiro

This inventor holds 15 USPTO granted patents. Top assignees: Nec Corporation, Nec Electronics Corporation. Active years: 1997-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shigetaka Kumashiro. Retrieved from https://idiyas.com/inventor/shigetaka-kumashiro

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15

% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 6

Forward Citations = 77(Granted Patents)


Location History:

  • Tokyo, JP (1997 - 2003)
  • Kawasaki, JP (2005)

Company Filing History:

goldMedal12 out of 36,684 
 
Nec Corporation
 patents
silverMedal3 out of 2,467 
 
Nec Electronics Corporation
 patents

Years Active: 1997-2005

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15 patents (USPTO):Explore Patents
1. 6931609 - Capacitance parameters calculation method for MOSFET and program therefor (2005-08-16),
2. 6566695 - Hyperbolic type channel MOSFET (2003-05-20),
3. 6553340 - Computer simulation method for semiconductor device (2003-04-22),
4. 6505147 - Method for process simulation (2003-01-07),
5. 6426535 - Semiconductor device having improved short channel resistance (2002-07-30),
6. 6360190 - Semiconductor process device simulation method and storage medium storing simulation program (2002-03-19),
7. 6242272 - Reverse profiling method for profiling modulated impurity density distribution of semiconductor device (2001-06-05),
8. 6154717 - Computer simulation method of impurity with pileup phenomenon (2000-11-28),
9. 6144929 - Method of simulating impact ionization phenomenon in semiconductor device (2000-11-07),
10. 6080200 - Diffusion simulation method for impurities using mesh points and (2000-06-27),
11. 6006026 - Method for simulating impurity diffusion in semiconductor with oxidation (1999-12-21),
12. 5847973 - Oxidation simulation method (1998-12-08),
13. 5784302 - High speed point defect diffusion simulating method (1998-07-21),
14. 5682338 - Method of estimating initial values of potential in semiconductor device (1997-10-28),
15. 5677846 - Device simulator and mesh generating method thereof (1997-10-14),

Title: Shigetaka Kumashiro: Innovator in MOSFET Technology

Introduction

Shigetaka Kumashiro is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) devices. With a total of 15 patents to his name, Kumashiro's work has had a lasting impact on the industry.

Latest Patents

Among his latest patents is a method for calculating capacitance parameters for MOSFETs. This innovative approach aims to enhance the precision of capacitance parameter calculations in equivalent circuit models. By utilizing a computer to store equivalent circuit models and convert S parameter data into Y parameter data, Kumashiro's method improves the reliability of device evaluation and circuit simulation. His work also includes the development of a hyperbolic type channel MOSFET, which further advances the capabilities of semiconductor devices.

Career Highlights

Kumashiro has had a distinguished career, working with notable companies such as NEC Corporation and NEC Electronics Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking innovations.

Collaborations

Throughout his career, Kumashiro has collaborated with esteemed colleagues, including Kiyoshi Takeuchi and Yasuhisa Naruta. These partnerships have fostered a collaborative environment that has led to significant advancements in their respective fields.

Conclusion

Shigetaka Kumashiro's contributions to MOSFET technology and his impressive portfolio of patents underscore his role as a leading inventor in the semiconductor industry. His innovative methods and collaborative efforts continue to influence the development of advanced electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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