Capacitance parameters calculation method for mosfet and program therefor

Abstract

In order to calculate, at high precision, capacitance parameters of an equivalent circuit model including tunnel conductances corresponding to a film thickness of a gate oxide film of an MOSFET to make reliability of device evaluation and circuit simulation improve, a computer preliminarily stores an equivalent circuit model, converts S parameter data into Y parameter data, determines whether it is possible or impossible to calculate the capacitance parameters on the basis of a real part secondary dependent area and an imaginary part primary dependent area of a frequency characteristic of the Y parameter data, generates relational expressions for Y parameters of a two-terminal pair circuit that correspond to the equivalent circuit model, measurement conditions, and a manufacturing condition of the MOFET when it is possible to calculate the capacitance parameters, producing approximated expressions by approximation conditions corresponding to the real part secondary dependent area and the imaginary part primary dependent area, and calculates the capacitance parameters on the basis of the approximated expressions on the basis of the approximated expressions and equations of the imaginary parts in the Y parameter data.