The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1998
Filed:
Mar. 12, 1996
Shigetaka Kumashiro, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In an interstitial concentration simulating method, a mesh is set in a simulation region of a semiconductor device. Under a condition that an area outside of the simulation region is infinite, a provisional interstitial concentration and a provisional interstitial diffusion flux at the boundary of the simulation region are calculated. Then, an interstitial diffusion rate at the boundary of the simulation region is calculated by a ratio of the provisional interstitial diffusion flux to the provisional interstitial concentration. Finally, an interstitial diffusion equation is solved for each element of the mesh using the interstitial diffusion rate at the boundary.
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