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For the Inventor, By the Inventor

Taipei, Taiwan

Sheng-Wen Yu

This inventor holds 11 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sheng-Wen Yu. Retrieved from https://idiyas.com/inventor/sheng-wen-yu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11

% Patents Active = 72.7

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 18(Granted Patents)


Company Filing History:

goldMedal11 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2022

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11 patents (USPTO):Explore Patents
1. 11387363 - Source/drain junction formation (2022-07-12),
2. 10720529 - Source/drain junction formation (2020-07-21),
3. 10158019 - Source/drain junction formation (2018-12-18),
4. 10134896 - Cyclic deposition etch chemical vapor deposition epitaxy to reduce EPI abnormality (2018-11-20),
5. 9953878 - Method of forming a semiconductor device (2018-04-24),
6. 9722083 - Source/drain junction formation (2017-08-01),
7. 9482518 - Systems and methods for semiconductor device process determination using reflectivity measurement (2016-11-01),
8. 9257323 - Semiconductor device and method for forming the same (2016-02-09),
9. 8927359 - Multi-composition dielectric for semiconductor device (2015-01-06),
10. 8883522 - System for semiconductor device characterization using reflectivity measurement (2014-11-11),
11. 8753904 - Method and system for semiconductor device pattern loading effect characterization (2014-06-17),

Title: The Innovative Mind of Sheng-Wen Yu

Introduction

Sheng-Wen Yu, an accomplished inventor based in New Taipei, Taiwan, is known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 11 patents, Yu is recognized for his pioneering techniques and advancements that enhance the performance of electronic components.

Latest Patents

Among Sheng-Wen Yu's latest patents is a groundbreaking method for source/drain junction formation. This method outlines the formation of a first channel region along with a first gate structure positioned over it. The invention details the creation of a first source/drain region adjacent to the channel, which incorporates a crystalline structure doped with a first dopant. A novel aspect of this patent is the formation of a first silicide over this region. The source/drain region accommodates a specific concentration of the first dopant, ranging between 2.0×10^20 atoms per cubic centimeter and 4.0×10^20 atoms per cubic centimeter, within a depth of 8 to 10 nanometers. Such innovations play a crucial role in optimizing semiconductor devices.

Career Highlights

Sheng-Wen Yu is currently associated with Taiwan Semiconductor Manufacturing Company Limited, a leading entity in the semiconductor industry. His role there has allowed him access to cutting-edge research and development resources, facilitating the advancement of his inventive projects. Over the years, Yu has showcased his innovative spirit through his prolific output of patents, thereby reinforcing TSMC's position as a technology leader.

Collaborations

Throughout his career, Yu has collaborated with notable coworkers, including Chun Hsiung Tsai and Ziwei Fang. These collaborations have undoubtedly contributed to the refinement and success of his patent applications, fostering an environment of innovation and excellence within the team.

Conclusion

Sheng-Wen Yu stands out as a prominent figure in the realm of semiconductor inventions. His 11 patents, specifically in source/drain junction formation, underscore his commitment to developing cutting-edge technologies. As he continues his work at Taiwan Semiconductor Manufacturing Company Limited, Yu's innovative contributions will likely shape the future of semiconductor technologies, marking him as a key inventor in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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