The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9257323 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 09, 2016

Filed:

May. 15, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yu-Lien Huang, Jhubei, TW;

Tung Ying Lee, Hsin-Chu, TW;

Pei-Yi Lin, Taichung, TW;

Chun-Hsiang Fan, Longtan Township, TW;

Sheng-Wen Yu, New Taipei, TW;

Neng-Kuo Chen, Sinshih Township, TW;

Ming-Huan Tsai, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/76229 (2013.01);
Abstract

A semiconductor device includes a substrate and a gate structure formed over the substrate. The semiconductor device further includes an insulator feature formed in the substrate. The insulator feature includes an insulating layer and a capping layer over the insulating layer.


Find Patent Forward Citations

Huang, Yu-Lien. (2016). Semiconductor device and method for forming the same (U.S. Patent No. 9257323). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9257323

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