The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Jul. 31, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun Hsiung Tsai, Xinpu Township, TW;
Sheng-Wen Yu, New Taipei, TW;
Ziwei Fang, Baoshan Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A device includes a first channel region and a first gate structure formed over the first channel region. A first source/drain region is adjacent the first channel region and the first source/drain region includes a crystalline structure doped with a first dopant. A first silicide is formed over the first source/drain region. The first source/drain region includes a first concentration of the first dopant between 2.0×10atoms per centimeter cubed and 4.0×10atoms per centimeter cubed at a depth of 8 to 10 nanometers. A gradient of decreasing concentration of the first dopant is one decade for every 5.5 to 7.5 nanometers deeper than the first concentration.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile