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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9722083 B1

PDFFull Text
Expired
Date of Patent:
Aug. 01, 2017

Filed:

Oct. 17, 2013

Source/drain junction formation

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chun Hsiung Tsai, Xinpu Township, TW;

Sheng-Wen Yu, New Taipei, TW;

Ziwei Fang, Baoshan Township, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Calvin Choi

Assistant Examiner:

Xiaoming Liu

Int. Cl.
CPC ...
H01L 21/425 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/265 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/66803 (2013.01); H01L 29/665 (2013.01);
Abstract

An embodiment method of forming a source/drain region for a transistor includes forming a recess in a substrate, epitaxially growing a semiconductor material in the recess, amorphizing the semiconductor material, and doping the semiconductor material to form a source/drain region. In an embodiment, the doping utilizes either phosphorus or boron as the dopant. Also, the amorphizing and the doping may be performed simultaneously. The amorphizing may be performed at least in part by doping with helium.

Find Patent Forward Citations

Tsai, Chun. (2017). Source/drain junction formation (U.S. Patent No. 9722083). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9722083

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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