The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Nov. 07, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G01B 11/14 (2006.01); G01N 21/55 (2014.01); H01L 21/66 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
G01B 11/14 (2013.01); G01N 21/55 (2013.01); H01L 21/02636 (2013.01); H01L 21/324 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); G01N 2021/551 (2013.01); G01N 2021/555 (2013.01); G01N 2021/557 (2013.01); G01N 2201/061 (2013.01);
Abstract
Methods and systems that include receiving a plurality of reflectivity measurements on a semiconductor wafer. A reflectivity map is generated based on the received plurality of reflectivity measurements. The generated reflectivity map is used to determine a process parameter of an epitaxial growth process using the reflectivity map. In an embodiment, the process parameter is a power setting (heating) of a lamp of a CVD epitaxy tool.
Tsai, Chun. (2016). Systems and methods for semiconductor device process determination using reflectivity measurement (U.S. Patent No. 9482518). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9482518
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile