Hsinchu, Taiwan

Sheng-Tsai Huang

This inventor holds 12 USPTO granted patents and 1 published patent application. Top assignees: Being Advanced Memory Taiwan Limited, Ningbo Advanced Memory Technology Corporation, Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2008-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sheng-Tsai Huang. Retrieved from https://idiyas.com/inventor/sheng-tsai-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12 

% Patents Active = 91.7

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 35(Granted Patents)


Location History:

  • Hsin-chu, TW (2008 - 2016)
  • Jubei, TW (2016)
  • Hsinchu County, TW (2014 - 2020)

Company Filing History:


Years Active: 2008-2020

Loading Chart...
12 patents (USPTO):Explore Patents

Title: Innovations of Sheng-Tsai Huang

Introduction

Sheng-Tsai Huang is a prominent inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 12 patents. His work focuses on developing advanced memory devices and circuits that enhance performance and efficiency.

Latest Patents

One of his latest patents is a memory device that includes a memory array, a bit line driving circuit, a word line driving circuit, a read/write circuit, a controller, and a reference driving circuit. The memory array consists of several memory units, while the bit line driving circuit interprets a memory bit address to drive a bit line. The word line driving circuit interprets a memory word address to drive a word line. The read/write circuit is designed to read, set, or reset the memory units. The controller allows the memory array to operate in either a single memory unit mode or a dual memory unit mode. Additionally, the reference driving circuit drives a reference line that comprises several reference units located within the memory array.

Another notable patent is a memory driving circuit that includes a programmable current source, a reference voltage generation unit, and a voltage comparator unit. The programmable current source generates a second current based on a first current, which flows into a memory cell to produce a device voltage. The reference voltage generation unit generates a crystal voltage, while the voltage comparator unit compares the device voltage with the crystal voltage and sends a control signal to manage the programmable current source. This innovation ensures that the shape of the current pulse during the SET operation to the memory cell is well controlled.

Career Highlights

Sheng-Tsai Huang has worked with several companies in the memory technology sector, including Ningbo Advanced Memory Technology Corporation and Being Advanced Memory Taiwan Limited. His experience in these organizations has contributed to his expertise in developing cutting-edge memory solutions.

Collaborations

Some of his notable coworkers include Jui-Jen Wu and Fan-Yi Jien, who have collaborated with him on various projects in the field of memory technology.

Conclusion

Sheng-Tsai Huang is a distinguished inventor whose work in memory technology has led to significant advancements in the industry. His innovative patents and contributions continue to shape the future of memory devices and circuits.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…