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Jiangsu Advanced Memory Technology Co., Ltd.

USPTO Granted Patents = 28

Forward Citations = 15

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26 inventors (with patents filed for the assignee):

Jui-Jen Wu (12 out of 76 patents)

Chung-Hon Lam (8 out of 8 patents)

Kuo-Feng Lo (6 out of 6 patents)

4. Fan-Yi Jien (6 out of 11 patents)

5. Ching-Sung Chiu (6 out of 6 patents)

6. Yu Zhu (4 out of 4 patents)

7. Yu-Cheng Liao (3 out of 3 patents)

8. Tzu-Hao Yang (3 out of 3 patents)

9. Junhua Zheng (3 out of 3 patents)

10. Toshio Sunaga (3 out of 3 patents)

11. Chieh-Fang Chen (2 out of 7 patents)

12. Chun-Chih Liu (2 out of 2 patents)

13. Chung Hon Lam (2 out of 2 patents)

14. Hao Ren Zhuang (2 out of 2 patents)

15. Yen Yu Hsu (2 out of 2 patents)

Core Competencies:

Diode Structure

Redundant Memory Circuit

Calibration Device

Artificial Neuromorphic Circuit

Layered Structure

Phase Change Memory

Mixed Mode Memory

Memory Drive Device

Wear Leveling

Memory Test Array

Sensing-Amplifying Device

Driving Circuit

28 patents: Sort by Forward Citations

1. 11996464 - Method of fabricating diode structure (2024-05-28),

2. 11829605 - Memory device with redundant memory circuit and repair method thereof (2023-11-28),

3. 11621024 - Calibration device (2023-04-04),

4. 11580370 - Artificial neuromorphic circuit and operation method (2023-02-14),

5. 11551070 - Artificial neuromorphic circuit and operation method (2023-01-10),

6. 11488820 - Method of fabricating layered structure (2022-11-01),

7. 11476417 - Phase change memory and method of fabricating the same (2022-10-18),

8. 11468307 - Artificial neuromorphic circuit and operation method (2022-10-11),

9. 11443789 - Memory device (2022-09-13),

10. 11443177 - Artificial neuromorphic circuit and operation method (2022-09-13),

11. 11436137 - Memory device and operation method for performing wear leveling on a memory device (2022-09-06),

12. 11362192 - Method of fabricating diode structure (2022-06-14),

13. 11342021 - Mixed mode memory (2022-05-24),

14. 11315632 - Memory drive device (2022-04-26),

15. 11302866 - Method of manufacturing phase change memory and phase change memory (2022-04-12),

Company Overview

Jiangsu Advanced Memory Technology Co., Ltd. specializes in the development and manufacturing of advanced memory solutions, focusing on high-performance semiconductor technologies. The company is engaged in research and innovation within the memory chip sector, contributing to various applications in computing and data storage. Located in Jiangsu, China, it aims to enhance the efficiency and reliability of memory products, catering to the growing demands of the global technology market.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

28 Patents

#18 in Jiangsu

#1,087 in China

#23,299 in the World

Jiangsu Advanced Memory Technology Co., Ltd.

Forward Citations = 15

26 inventors:

Jui-Jen Wu (12 out of 76 patents)

Chung-Hon Lam (8 out of 8 patents)

Kuo-Feng Lo (6 out of 6 patents)

4. Fan-Yi Jien (6 out of 11 patents)

5. Ching-Sung Chiu (6 out of 6 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Jiangsu Advanced Memory Technology Co., Ltd.. Retrieved from https://idiyas.com/company/jiangsu-advanced-memory-technology-company

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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