The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Jun. 27, 2018
Jiangsu Advanced Memory Technology Co., Ltd., Jiangsu, CN;
Jiangsu Advanced Memory Semiconductor Co., Ltd., Jiangsu, CN;
Alto Memory Technology Corporation, Hsinchu County, TW;
Jui-Jen Wu, Hsinchu County, TW;
JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD., Jiangsu, CN;
JIANGSU ADVANCED MEMORY SEMICONDUCTOR CO., LTD., Jiangsu, CN;
ALTO MEMORY TECHNOLOGY CORPORATION, Hsinchu County, TW;
Abstract
Disclosed is a memory drive device. The memory drive device comprises a control circuit, a reference voltage generation circuit, and a first switch. The control circuit is used to generate a first signal according to an input signal. The reference voltage generation circuit comprises a reference resistor and is used to generate a reference signal according to the first signal. The first switch is coupled to a memory resistor and is used to generate a drive signal according to the first signal so as to set a resistance value of the memory resistor. When the input signal is decreased and a resistance value of the memory resistor is greater than a resistance value of the reference resistor, the time when the drive signal is decreased is greater than the time when the reference signal is decreased.