The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Aug. 10, 2020
Jiangsu Advanced Memory Technology Co., Ltd., Jiangsu, CN;
Jiangsu Advanced Memory Semiconductor Co., Ltd., Jiangsu, CN;
Sheng-Hung Cheng, Hsinchu County, TW;
Ming-Feng Chang, Hsinchu County, TW;
Tzu-Hao Yang, Hsinchu County, TW;
JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD., Jiangsu, CN;
JIANGSU ADVANCED MEMORY SEMICONDUCTOR CO., LTD., Jiangsu, CN;
Abstract
A phase change memory and a method of fabricating the same are provided. The phase change memory includes a lower electrode, an annular heater disposed over the lower electrode, an annular phase change layer disposed over the annular heater, and an upper electrode. The annular phase change layer and the annular heater are misaligned in a normal direction of the lower electrode. The upper electrode is disposed over the annular phase change layer, in which the upper electrode is in contact with an upper surface of the annular phase change layer. The present disclosure simplifies the manufacturing process of the phase change memory, reduces the manufacturing cost, and improves the manufacturing yield. In addition, a contact surface between the heater and the phase change layer of the phase change memory of the present disclosure is very small, so that the phase change memory has an extremely low reset current.