Sheng-Hung Cheng

Title: Innovations of Sheng-Hung Cheng in Phase Change Memory Technology

Introduction

Sheng-Hung Cheng is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of memory technology, particularly in phase change memory systems. With a total of 2 patents to his name, Cheng's work has the potential to revolutionize data storage solutions.

Latest Patents

Cheng's latest patents focus on a phase change memory and the method of fabricating the same. The design includes a lower electrode, an annular heater, an annular phase change layer, and an upper electrode. The innovative aspect of this memory system lies in the misalignment of the annular phase change layer and the annular heater in relation to the lower electrode. This configuration simplifies the manufacturing process, reduces costs, and enhances yield. Additionally, the small contact surface between the heater and the phase change layer results in an extremely low reset current, making the memory system more efficient.

Career Highlights

Throughout his career, Cheng has worked with prominent companies in the semiconductor industry, including Jiangsu Advanced Memory Technology Co., Ltd. and Jiangsu Advanced Memory Semiconductor Co., Ltd. His experience in these organizations has contributed to his expertise in memory technology.

Collaborations

Cheng has collaborated with talented individuals such as Ming-Feng Chang and Tzu-Hao Yang. These partnerships have likely fostered innovation and creativity in his projects.

Conclusion

Sheng-Hung Cheng's contributions to phase change memory technology demonstrate his commitment to advancing the field of data storage. His innovative patents and collaborations highlight his role as a key player in the semiconductor industry.