Jiangsu Advanced Memory Technology Co., Ltd.

Jiangsu Advanced Memory Semiconductor Co., Ltd.

Sheng-Hung Cheng

Tzu-Hao Yang

Ming-Feng Chang

A phase change memory and a method of fabricating the same are provided. The phase change memory includes a lower electrode, an annular heater disposed over the lower electrode, an annular phase change layer disposed over the annular heater, and an upper electrode. The annular phase change layer and the annular heater are misaligned in a normal direction of the lower electrode. The upper electrode is disposed over the annular phase change layer, in which the upper electrode is in contact with an upper surface of the annular phase change layer. The present disclosure simplifies the manufacturing process of the phase change memory, reduces the manufacturing cost, and improves the manufacturing yield. In addition, a contact surface between the heater and the phase change layer of the phase change memory of the present disclosure is very small, so that the phase change memory has an extremely low reset current.

Phase change memory and method of fabricating the same

A phase change memory and a method of fabricating the same are provided. The phase change memory includes a lower electrode, an annular heater, an annular phase change layer, and an upper electrode. The annular heater is disposed over the lower electrode. The annular phase change layer is disposed over the annular heater, and the annular phase change layer and the annular heater are misaligned in a normal direction of the lower electrode. The upper electrode is disposed over the annular phase change layer. The present disclosure simplifies the manufacturing process of the phase change memory, reduces the manufacturing cost, and improves the manufacturing yield. In addition, a contact surface between the heater and the phase change layer of the phase change memory of the present disclosure is very small, so that the phase change memory has an extremely low reset current.

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Hsinchu County, Taiwan

Sheng-Hung Cheng