The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Aug. 13, 2020
Jiangsu Advanced Memory Technology Co., Ltd., Jiangsu, CN;
Jiangsu Advanced Memory Semiconductor Co., Ltd., Jiangsu, CN;
Chieh-Fang Chen, Hsinchu County, TW;
Kuo-Feng Lo, Hsinchu County, TW;
Chung-Hon Lam, Hsinchu County, TW;
Yu Zhu, Hsinchu County, TW;
JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD., Jiangsu, CN;
JIANGSU ADVANCED MEMORY SEMICONDUCTOR CO., LTD., Jiangsu, CN;
Abstract
A method of manufacturing a diode structure includes forming a first stack on a silicon layer on a substrate. A first sidewall spacer extending along and covering a sidewall of the first stack is formed. The silicon layer is selectively etched to a first predetermined depth, thereby forming a second stack. The remaining silicon layer includes a silicon base. A second sidewall spacer extending along and covering a sidewall of the second stack is formed. The silicon base is selectively etched to form a third stack on the substrate. With the second sidewall spacer as a mask, lateral plasma ion implantation is performed. Defects at the interface between two adjacent semiconductor layers can be reduced by the method.