The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Jul. 22, 2020
Jiangsu Advanced Memory Technology Co., Ltd., Jiangsu, CN;
Jiangsu Advanced Memory Semiconductor Co., Ltd., Jiangsu, CN;
Jiangsu Advanced Memory Technology Co., Ltd., Jiangsu, CN;
Jiangsu Advanced Memory Semiconductor Co., Ltd., Jiangsu, CN;
Abstract
A method of manufacturing a phase change memory includes: forming a stacked structure including a conductive layer, a lower electrode layer over the conductive layer, an upper electrode layer, a phase change material between the lower and upper electrode layers, and a selector material between the conductive layer and the lower electrode layer; etching the upper electrode layer to form an upper electrode wire; etching the phase change material according to the upper electrode wire to form a phase change material layer and expose a portion of the lower electrode layer, wherein the phase change material layer has an exposed side surface; after etching the phase change material, performing a nitridizing treatment on the side surface of the phase change material layer to form a nitridized phase change material layer covering the same; and etching the lower electrode layer, the selector material and the conductive layer.