The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Aug. 05, 2015
Applicants:

Ningbo Advanced Memory Technology Corporation, Ningbo, CN;

Being Advanced Memory Taiwan Limited, Hsinchu County, TW;

Inventors:

Jia-Hwang Chang, Hsinchu County, TW;

Fan-Yi Jien, Hsinchu County, TW;

Jui-Jen Wu, Hsinchu County, TW;

Sheng-Tsai Huang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0038 (2013.01); G11C 5/147 (2013.01);
Abstract

A memory driving circuit includes a current source configured to output a second current, a first switching unit configured to undergo switching to connect to the current source selectively to output the second current, a voltage generating unit configured to provide a reference voltage, a capacitive energy storage unit configured to store energy according to the reference voltage, a third switching unit configured to undergo switching to connect the voltage generating unit and the capacitive energy storage unit selectively, a second switching unit configured to undergo switching to connect the capacitive energy storage unit selectively to output a third current, and a current output terminal configured to output the second current, the third current, or the sum of the second current and the third current.


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