The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Oct. 06, 2015
Ningbo Advanced Memory Technology Corporation, Ningbo, CN;
Being Advanced Memory Taiwan Limited, Hsinchu County, TW;
Jui-Jen Wu, Hsinchu County, TW;
Jia-Hwang Chang, Hsinchu County, TW;
Sheng-Tsai Huang, Hsinchu County, TW;
Fan-Yi Jien, Hsinchu County, TW;
Ningbo Advanced Memory Technology Corporation, Ningbo, CN;
Being Advanced Memory Taiwan Limited, Hsinchu County, TW;
Abstract
A non-volatile memory cell and a non-volatile memory device are provided. The non-volatile memory cell includes a latch structure, a first read/write circuit, a first memristor, a second read/write circuit and a second memristor. The first read/write circuit controls a writing operation of the first memristor. The second read/write circuit controls a writing operation of the second memristor. When a restore operation is performed, the data in the latch structure is restored by using the resistance difference between the first memristor and the second memristor. The non-volatile device of the invention combines the advantages of fast memory unit and non-volatile memory, and it may work at a high speed and retain data when powered off.