The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Jan. 28, 2016
Ningbo Advanced Memory Technology Corporation, Ningbo, CN;
Being Advanced Memory Taiwan Limited, Hsinchu County, TW;
Jia-Hwang Chang, Hsinchu County, TW;
Jui-Jen Wu, Hsinchu County, TW;
Sheng-Tsai Huang, Hsinchu County, TW;
Fan-Yi Jien, Hsinchu County, TW;
Ningbo Advanced Memory Technology Corporation, Ningbo, CN;
Being Advanced Memory Taiwan Limited, Hsinchu County, TW;
Abstract
A non-volatile memory device includes plural non-memory cells. Each non-volatile memory cell includes a first switch, a first memristor, a second switch, a second memristor and a third switch. The control terminal of the first switch is coupled to a word line. The first memristor is provided with a first impedance. The control terminal of the second switch is coupled to the word line. The second memristor is provided with a second impedance. The first switch, the first memristor, the second switch and the second memristor are serially connected between a bit line and an inverted bit line in an alternate manner. The third switch is used for configuring the first impedance and the second impedance. The non-volatile memory device provided by the disclosure has a characteristic of quick access and the data stored therein does not require a dynamic update.