The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Apr. 14, 2016
Jiangsu Advanced Memory Technology Co., Ltd., Jiangsu, CN;
Alto Memory Technology Corporation, Hsinchu County, TW;
Fan-Yi Jien, Hsinchu County, TW;
Jia-Hwang Chang, Hsinchu County, TW;
Sheng-Tsai Huang, Hsinchu County, TW;
Jui-Jen Wu, Hsinchu County, TW;
Jiangsu Advanced Memory Technology Co., Ltd., Jiangsu, CN;
ALTO MEMORY TECHNOLOGY CORPORATION, Hsinchu County, TW;
Abstract
A memory driving circuit is disclosed herein. The memory driving circuit includes a programmable current source, a reference voltage generation unit and a voltage comparator unit, The programmable current source generates a second current according to a first current. The second current flows into a memory cell, and produces a device voltage at the input of the memory cell. The reference voltage generation unit generates a crystal voltage. The voltage comparator unit compares the device voltage with the crystal voltage and sends out a control signal to control the programmable current source. The first current and the second current are adjusted by the control signal so that the shape of the current pulse of SET operation to the memory cell is well controlled.