Milpitas, CA, United States of America

Sheng-Chin Kung

USPTO Granted Patents = 9 

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2018-2023

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9 patents (USPTO):

Title: Innovator Spotlight: Sheng-Chin Kung - Pioneering Nanowire Structures and Semiconductor Innovations

Introduction:

Sheng-Chin Kung is a renowned inventor based in Milpitas, CA, with a deep passion for advancing semiconductor technologies. With an impressive portfolio of 9 patents, Kung has made significant contributions to the field of nanowire structures and gate interface engineering.

Latest Patents:

1. Horizontal gate-all-around device nanowire air gap spacer formation: Kung's innovative method involves selectively etching material from a stack to create recesses on each side, depositing a dielectric material, and strategically depositing a stressor layer to form gaps. This patent revolutionizes the formation of horizontal gate-all-around (hGAA) structures.

2. Gate interface engineering with doped layer: Kung's method includes forming a silicon layer with a dopant, oxidizing a portion of the layer to drive the dopant into the semiconductor substrate, and optimizing semiconductor structure production.

Career Highlights:

Sheng-Chin Kung is a key figure at Applied Materials, Inc., a leading global provider of equipment, services, and software for the semiconductor industry. His expertise and innovative solutions have played a vital role in shaping the company's technological advancements and market competitiveness.

Collaborations:

Kung collaborates closely with talented individuals in his field, including his coworkers Shiyu Sun and Nam Sung Kim. Together, they contribute to cutting-edge research and development initiatives that drive progress in semiconductor technologies.

Conclusion:

Inventor Sheng-Chin Kung's dedication to pushing the boundaries of semiconductor innovations is evident in his patent portfolio and career achievements. His pioneering work in nanowire structures and gate interface engineering underscores his position as a visionary leader in the industry, shaping the future of semiconductor technologies.

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