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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9966438 B1

PDFFull Text
Date of Patent:
May. 08, 2018

Filed:

Jan. 27, 2017

Method of doped germanium formation

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yi-Chiau Huang, Fremont, CA (US);

Hua Chung, San Jose, CA (US);

Sheng-Chin Kung, Milpitas, CA (US);

Xuebin Li, Sunnyvale, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Patterson + Sheridan LLP

Primary Examiner:

Bac Au

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/167 (2006.01); H01L 29/161 (2006.01); H01L 21/225 (2006.01); H01L 21/3065 (2006.01); H01L 21/324 (2006.01); H01L 21/20 (2006.01); H01L 21/203 (2006.01); H01L 21/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/167 (2013.01); H01L 21/02057 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/02639 (2013.01); H01L 21/02656 (2013.01); H01L 21/02667 (2013.01); H01L 21/2018 (2013.01); H01L 21/2033 (2013.01); H01L 21/2053 (2013.01); H01L 21/2252 (2013.01); H01L 21/3065 (2013.01); H01L 21/324 (2013.01); H01L 29/161 (2013.01);
Abstract

Implementations described herein generally relate to methods and systems for depositing layer on substrates, and more specifically, to methods for forming boron or gallium-doped germanium on silicon-containing surfaces. In one implementation, a method of processing a substrate is provided. The method comprises exposing a substrate having an exposed silicon-germanium surface and an exposed dielectric surface to a pre-treatment process, selectively depositing a boron-doped or a gallium-doped layer on the exposed silicon-germanium surface and exposing the substrate to a post-treatment process.

Find Patent Forward Citations

Huang, Yi-Chiau. (2018). Method of doped germanium formation (U.S. Patent No. 9966438). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9966438

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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