The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Oct. 26, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Steven C. Hung, Sunnyvale, CA (US);
Benjamin Colombeau, San Jose, CA (US);
Abhishek Dube, Fremont, CA (US);
Sheng-Chin Kung, Milpitas, CA (US);
Patricia M. Liu, Saratoga, CA (US);
Malcolm J. Bevan, Santa Clara, CA (US);
Johanes Swenberg, Los Gatos, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include forming a silicon layer over a semiconductor substrate. The semiconductor substrate may include silicon germanium. The methods may include oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The methods may include removing the sacrificial oxide. The methods may include oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material. The methods may include forming a high-k dielectric material overlying the oxygen-containing material.