The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2022

Filed:

Jun. 15, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Steven C. H. Hung, Sunnyvale, CA (US);

Benjamin Colombeau, Sunnyvale, CA (US);

Abhishek Dube, Fremont, CA (US);

Sheng-Chin Kung, Milpitas, CA (US);

Patricia M. Liu, Saratoga, CA (US);

Malcolm J. Bevan, Saratoga, CA (US);

Johanes F. Swenberg, Los Gatos, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28238 (2013.01); H01L 21/02236 (2013.01); H01L 21/02532 (2013.01); H01L 21/28185 (2013.01); H01L 21/32105 (2013.01); H01L 21/823412 (2013.01);
Abstract

Processing methods may be performed to produce semiconductor structures. The methods may include forming a silicon layer over a semiconductor substrate. The forming may include forming a silicon layer incorporating a dopant. The methods may include oxidizing a portion of the silicon layer while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The oxidizing may drive a portion of the dopant through the silicon layer and into the semiconductor substrate.


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