The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Dec. 12, 2017
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Sheng-Chin Kung, Milpitas, CA (US);
Hua Chung, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 29/1054 (2013.01); H01L 29/66 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/161 (2013.01);
Abstract
The present disclosure generally relates to devices having conformal semiconductor cladding materials, and methods of forming the same. The cladding material is a silicon germanium epitaxial material. The cladding material is capable of being deposited to a thickness which is less than cladding materials formed by conventional deposition/etch techniques.
Kung, Sheng-Chin. (2021). Method of forming conformal epitaxial semiconductor cladding material over a fin field effect transistor (finfet) device (U.S. Patent No. 11011635). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11011635
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile