Oxnard, CA, United States of America

Shawn D Burnham

USPTO Granted Patents = 12 

Average Co-Inventor Count = 5.0

ph-index = 8

Forward Citations = 185(Granted Patents)


Company Filing History:


Years Active: 2012-2018

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12 patents (USPTO):Explore Patents

Title: Innovations of Inventor Shawn D. Burnham

Introduction

Shawn D. Burnham, based in Oxnard, California, is an accomplished inventor with a remarkable portfolio of 12 patents. His innovations primarily focus on advancements in field-effect transistors (FETs) and methods that significantly enhance semiconductor technology.

Latest Patents

Burnham's latest patents showcase his ingenuity and technical proficiency in the field of electronics. One notable invention is the "Stepped Field Plate Wide Bandgap Field-Effect Transistor and Method." This patent describes a method for constructing a stepped field gate for an FET, which involves the use of electron beam (EB) lithography to define the field plates. The process meticulously layers various passivation elements and employs lithography techniques for optimal design, leading to improved performance of the transistor.

Another significant patent is the "Apparatus and Method for Reducing the Interface Resistance in GaN Heterojunction FETs." This invention addresses the critical issue of interface resistance between the source/drain and gate of high-frequency FETs (HFETs). By engineering the bandgap of the 2DEG outside a gate region, Burnham's method greatly increases charge density and reduces resistance, making it applicable to both depletion and enhancement mode HFETs.

Career Highlights

Shawn D. Burnham currently works at Hrl Laboratories, LLC, where he continues to contribute to the field of semiconductor technology. His career has been characterized by a commitment to innovation and a drive to advance electronic components that impact various industries.

Collaborations

In his professional journey, Burnham has collaborated with talented peers such as Miroslav Micovic and Andrea Corrion. These collaborative efforts have undoubtedly enriched his work and fostered a culture of innovation and teamwork within the organization.

Conclusion

Shawn D. Burnham stands out as a prominent figure in the field of semiconductor innovations. With his impressive array of patents and commitment to advancing technology, he has made significant contributions that will influence the future of electronics. His inventive spirit and collaborative approach position him as a valuable asset to Hrl Laboratories, LLC and the broader scientific community.

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