The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Oct. 21, 2010
Shawn D Burnham, Oxnard, CA (US);
Karim S. Boutros, Moorpark, CA (US);
Shawn D Burnham, Oxnard, CA (US);
Karim S. Boutros, Moorpark, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A two stage plasma etching technique is described that allows the fabrication of an enhancement mode GaN HFET/HEMT. A gate recess area is formed in the Aluminum Gallium Nitride barrier layer of an GaN HFET/HEMT. The gate recess is formed by a two stage etching process. The first stage of the technique uses oxygen to oxidize the surface of the Aluminum Gallium Nitride barrier layer below the gate. Then the second stage uses Boron tricloride to remove the oxidized layer. The result is a self limiting etch process that uniformly thins the Aluminum Gallium Nitride layer below the HFET's gate region such that the two dimensional electron gas is not formed below the gate, thus creating an enhancement mode HFET.