The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Jul. 28, 2009
Tahir Hussain, Calabasas, CA (US);
Miroslav Micovic, Thousand Oaks, CA (US);
Wah S. Wong, Montebello, CA (US);
Shawn D. Burnham, Oxnard, CA (US);
Tahir Hussain, Calabasas, CA (US);
Miroslav Micovic, Thousand Oaks, CA (US);
Wah S. Wong, Montebello, CA (US);
Shawn D. Burnham, Oxnard, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A method of fabricating a normally 'off' GaN heterostructure field effect transistor having a source and a drain including depositing a passivation layer patterned to cover a channel region between a source and a drain, forming a first opening in the passivation layer, the first opening for defining a gate area in the channel region and the first opening having a first length dimension along a direction of current flow between the source and the drain, and implanting ions in an implant area within the gate area, wherein the implant area has a second length dimension along the direction of current flow shorter than the first length dimension.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile