The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Dec. 06, 2011
Rongming Chu, Calabasas, CA (US);
Zijian “ray” LI, Oak Park, CA (US);
Karim S. Boutros, Moorpark, CA (US);
Shawn Burnham, Oxnard, CA (US);
Rongming Chu, Calabasas, CA (US);
Zijian “Ray” Li, Oak Park, CA (US);
Karim S. Boutros, Moorpark, CA (US);
Shawn Burnham, Oxnard, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A field effect transistor (FET) having a source contact to a channel layer, a drain contact to the channel layer, and a gate contact on a barrier layer over the channel layer, the FET including a dielectric layer on the barrier layer between the source contact and the drain contact and over the gate contact, and a field plate on the dielectric layer, the field plate connected to the source contact and extending over a space between the gate contact and the drain contact and the field plate comprising a sloped sidewall in the space between the gate contact and the drain contact.