The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Apr. 11, 2011
Keisuke Shinihara, Thousand Oaks, CA (US);
Andrea Corrion, Santa Monica, CA (US);
Miroslav Micovic, Thousand Oaks, CA (US);
Paul B. Hashimoto, Los Angeles, CA (US);
Shawn D. Burnham, Oxnard, CA (US);
Hooman Kazemi, Thousand Oaks, CA (US);
Peter J. Willadsen, Acton, CA (US);
Dean C. Regan, Moorpark, CA (US);
Keisuke Shinihara, Thousand Oaks, CA (US);
Andrea Corrion, Santa Monica, CA (US);
Miroslav Micovic, Thousand Oaks, CA (US);
Paul B. Hashimoto, Los Angeles, CA (US);
Shawn D. Burnham, Oxnard, CA (US);
Hooman Kazemi, Thousand Oaks, CA (US);
Peter J. Willadsen, Acton, CA (US);
Dean C. Regan, Moorpark, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A method of fabricating a GaN HEMT includes growing a first epitaxial layer on a substrate, growing a second epitaxial layer on the first epitaxial layer, growing a third epitaxial layer on the second epitaxial layer, depositing a first dielectric film on the third epitaxial layer, using dielectric films to form a first sidewall dielectric spacer, forming a sidewall gate adjacent the first sidewall dielectric spacer. The sidewall gate may be made to be less than 50 nm in length.