Keisuke Shinihara

Title: Keisuke Shinihara: Innovator in GaN HEMT Technology

Introduction

Keisuke Shinihara is a notable inventor based in Thousand Oaks, CA. He has made significant contributions to the field of semiconductor technology, particularly in the development of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). His innovative approach has led to advancements that are crucial for modern electronic applications.

Latest Patents

Keisuke Shinihara holds a patent for a method of fabricating a GaN HEMT. This patent, titled "Self Aligned Sidewall Gate GaN HEMT," describes a process that includes growing multiple epitaxial layers on a substrate. The method involves depositing a dielectric film and forming a sidewall gate adjacent to a dielectric spacer, with the sidewall gate being less than 50 nm in length. This innovation enhances the performance and efficiency of GaN HEMTs, making them more viable for various applications.

Career Highlights

Shinihara is currently employed at HRL Laboratories, LLC, where he continues to push the boundaries of semiconductor research. His work has not only contributed to the advancement of technology but has also positioned him as a key player in the field of electronics. With a focus on innovative solutions, he has established himself as a respected inventor.

Collaborations

Keisuke has collaborated with talented individuals such as Andrea Corrion and Miroslav Micovic. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Keisuke Shinihara's contributions to GaN HEMT technology exemplify the spirit of innovation in the semiconductor industry. His patent and ongoing work at HRL Laboratories, LLC highlight his commitment to advancing electronic technologies.