Hrl Laboratories, LLC

Keisuke Shinihara

Miroslav Micovic

Andrea Corrion

Paul B Hashimoto

Hooman Kazemi

Dean C Regan

Shawn D Burnham

Peter J Willadsen

A method of fabricating a GaN HEMT includes growing a first epitaxial layer on a substrate, growing a second epitaxial layer on the first epitaxial layer, growing a third epitaxial layer on the second epitaxial layer, depositing a first dielectric film on the third epitaxial layer, using dielectric films to form a first sidewall dielectric spacer, forming a sidewall gate adjacent the first sidewall dielectric spacer. The sidewall gate may be made to be less than 50 nm in length.

Self aligned sidewall gate GaN HEMT

Growing community of inventors

Thousand Oaks, CA, United States of America

Keisuke Shinihara