The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Jun. 29, 2011
Andrea Corrion, Oak Park, CA (US);
Karim S. Boutros, Moorpark, CA (US);
Mary Y. Chen, Oak Park, CA (US);
Samuel J. Kim, Torrance, CA (US);
Rongming Chu, Newbury Park, CA (US);
Shawn D. Burnham, Oxnard, CA (US);
Andrea Corrion, Oak Park, CA (US);
Karim S. Boutros, Moorpark, CA (US);
Mary Y. Chen, Oak Park, CA (US);
Samuel J. Kim, Torrance, CA (US);
Rongming Chu, Newbury Park, CA (US);
Shawn D. Burnham, Oxnard, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A field effect transistor (FET) includes source and drain electrodes, a channel layer, a barrier layer over the channel layer, a passivation layer covering the barrier layer for passivating the barrier layer, a gate electrode extending through the barrier layer and the passivation layer, and a gate dielectric surrounding a portion of the gate electrode that extends through the barrier layer and the passivation layer, wherein the passivation layer is a first material and the gate dielectric is a second material, and the first material is different than the second material.