The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Apr. 26, 2012
Andrea Corrion, Santa Monica, CA (US);
Miroslav Micovic, Thousand Oaks, CA (US);
Keisuke Shinohara, Thousand Oaks, CA (US);
Peter J Willadsen, Thousand Oaks, CA (US);
Shawn D Burnham, Oxnard, CA (US);
Hooman Kazemi, Thousand Oaks, CA (US);
Paul B Hashimoto, Los Angeles, CA (US);
Andrea Corrion, Santa Monica, CA (US);
Miroslav Micovic, Thousand Oaks, CA (US);
Keisuke Shinohara, Thousand Oaks, CA (US);
Peter J Willadsen, Thousand Oaks, CA (US);
Shawn D Burnham, Oxnard, CA (US);
Hooman Kazemi, Thousand Oaks, CA (US);
Paul B Hashimoto, Los Angeles, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
The present invention relates to fabrication of enhancement mode and depletion mode High Electron Mobility Field Effect Transistors on the same die separated by as little as 10 nm. The fabrication method uses selective decomposition and selective regrowth of the Barrier layer and the Cap layer to engineer the bandgap of a region on a die to form an enhancement mode region. In these regions zero or more devices may be fabricated.