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Hsinchu, Taiwan

Shan-Mei Liao

This inventor holds 17 USPTO granted patents and 12 published patent applications. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shan-Mei Liao. Retrieved from https://idiyas.com/inventor/shan-mei-liao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 94.1

Average Co-Inventor Count = 7.1

ph-index = 1


Company Filing History:

goldMedal16 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 491 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2023-2026

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17 patents (USPTO):Explore Patents
1. 12593496 - Multiple threshold voltage implementation through lanthanum incorporation (2026-03-31),
2. 12550374 - Semiconductor device and formation method thereof (2026-02-10),
3. 12453165 - P-type semiconductor devices with different threshold voltages and methods of forming the same (2025-10-21),
4. 12433011 - Post gate dielectric processing for semiconductor device fabrication (2025-09-30),
5. 12317574 - Device providing multiple threshold voltages and methods of making the same (2025-05-27),
6. 12302627 - Semiconductor device with non-conformal gate dielectric layers (2025-05-13),
7. 12171091 - Multi-layer high-k gate dielectric structure (2024-12-17),
8. 12154964 - Metal gates with layers for transistor threshold voltage tuning and methods of forming the same (2024-11-26),
9. 12142640 - Semiconductor structures with multiple threshold voltage offerings and methods thereof (2024-11-12),
10. 12074206 - Integrated circuit device with improved reliability (2024-08-27),
11. 12041760 - Multi-layer high-k gate dielectric structure (2024-07-16),
12. 12022643 - Multi-layer high-k gate dielectric structure (2024-06-25),
13. 12009400 - Device providing multiple threshold voltages and methods of making the same (2024-06-11),
14. 11908745 - Semiconductor device with non-conformal gate dieletric layers (2024-02-20),
15. 11735484 - Post gate dielectric processing for semiconductor device fabrication (2023-08-22),

Title: The Innovative Journey of Shan-Mei Liao

Introduction: Shan-Mei Liao, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Shan-Mei Liao's most recent patents include advancements in semiconductor technology, renewable energy systems, and artificial intelligence algorithms, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Shan-Mei Liao has held key positions in leading tech companies, where he spearheaded research and development projects that have resulted in numerous successful patent applications and product launches.

Collaborations: Throughout his career, Shan-Mei Liao has collaborated with top researchers, engineers, and scientists from renowned universities and research institutions worldwide, fostering a culture of innovation and knowledge exchange.

Conclusion: Shan-Mei Liao's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor in the global tech community. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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