The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chia-Wei Chen, Hsinchu, TW;
Chih-Yu Hsu, Hsinchu, TW;
Hui-Chi Chen, Hsinchu County, TW;
Shan-Mei Liao, Hsinchu, TW;
Jian-Hao Chen, Hsinchu, TW;
Cheng-Hao Hou, Hsinchu, TW;
Huang-Chin Chen, Hsinchu, TW;
Cheng Hong Yang, Hsinchu, TW;
Shih-Hao Lin, Hsinchu, TW;
Tsung-Da Lin, Hsinchu, TW;
Da-Yuan Lee, Hsinchu, TW;
Kuo-Feng Yu, Hsinchu County, TW;
Feng-Cheng Yang, Hsinchu County, TW;
Chi On Chui, Hsinchu, TW;
Yen-Ming Chen, Hsin-Chu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A device includes a semiconductor substrate, a fin structure on the semiconductor substrate, a gate structure on the fin structure, and a pair of source/drain features on both sides of the gate structure. The gate structure includes an interfacial layer on the fin structure, a gate dielectric layer on the interfacial layer, and a gate electrode layer of a conductive material on and directly contacting the gate dielectric layer. The gate dielectric layer includes nitrogen element.