The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Nov. 22, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
An-Hung Tai, Hsinchu County, TW;
Yung-Hsiang Chan, Taichung, TW;
Shan-Mei Liao, Hsinchu, TW;
Hsin-Han Tsai, Hsinchu, TW;
Jian-Hao Chen, Hsinchu, TW;
Kuo-Feng Yu, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes an interface layer on a substrate, a gate dielectric layer on the interface layer, and a work function metal layer on the gate dielectric layer. An interface between the interface layer and the gate dielectric layer has a concentration of a dipole-inducing element. The semiconductor device also includes an oxygen blocking layer on the work function metal layer and a metal fill layer on the oxygen blocking layer.