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For the Inventor, By the Inventor

Hsinchu, Taiwan

Yung-Hsiang Chan

This inventor holds 13 USPTO granted patents and 9 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yung-Hsiang Chan. Retrieved from https://idiyas.com/inventor/yung-hsiang-chan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13 

% Patents Active = 100.0

Average Co-Inventor Count = 6.6

ph-index = 1

Forward Citations = 10(Granted Patents)


Location History:

  • Hsinchu, TW (2018 - 2024)
  • Taichung, TW (2023 - 2024)

Company Filing History:

goldMedal13 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2018-2025

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13 patents (USPTO):Explore Patents
1. 12464789 - Semiconductor device structure and method for forming the semiconductor device structure (2025-11-04),
2. 12426309 - Method of manufacturing semiconductor devices and semiconductor devices (2025-09-23),
3. 12317574 - Device providing multiple threshold voltages and methods of making the same (2025-05-27),
4. 12302627 - Semiconductor device with non-conformal gate dielectric layers (2025-05-13),
5. 12154964 - Metal gates with layers for transistor threshold voltage tuning and methods of forming the same (2024-11-26),
6. 12142640 - Semiconductor structures with multiple threshold voltage offerings and methods thereof (2024-11-12),
7. 12080604 - Gate-all-around semiconductor device and method (2024-09-03),
8. 12009400 - Device providing multiple threshold voltages and methods of making the same (2024-06-11),
9. 11908745 - Semiconductor device with non-conformal gate dieletric layers (2024-02-20),
10. 11791214 - Gate-all-around semiconductor device and method (2023-10-17),
11. 11664279 - Multiple threshold voltage implementation through lanthanum incorporation (2023-05-30),
12. 11605563 - Semiconductor device with non-conformal gate dielectric layers (2023-03-14),
13. 10026838 - Fin-type field effect transistor and manufacturing method thereof (2018-07-17),

Title: The Innovative Journey of Yung-Hsiang Chan

Introduction: Yung-Hsiang Chan, a distinguished inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents: Yung-Hsiang Chan's latest patents focus on advancements in semiconductor technology, particularly in the development of energy-efficient microchips for various electronic devices.

Career Highlights: With a career spanning over two decades, Yung-Hsiang Chan has held key positions in leading tech companies, where he spearheaded research and development projects that have resulted in numerous successful patent applications.

Collaborations: Throughout his career, Yung-Hsiang Chan has collaborated with top researchers, engineers, and scientists from renowned institutions and companies worldwide, fostering a culture of innovation and excellence in the tech industry.

Conclusion: Yung-Hsiang Chan's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor in the ever-evolving world of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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