The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Mar. 10, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wen-Yao Yang, Taoyuan, TW;
Chia-Wei Chen, Hsinchu, TW;
Wei-Cheng Hsu, Chiayi, TW;
Jo-Chun Hung, Hsinchu, TW;
Yung-Hsiang Chan, Taichung, TW;
Hui-Chi Chen, Zhudong Township, Hsinchu County, TW;
Yen-Ta Lin, Taipei, TW;
Te-Fu Yeh, Kaohsiung, TW;
Yun-Chen Wu, Hsinchu, TW;
Yen-Ju Chen, Hsinchu, TW;
Chih-Ming Sun, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure includes forming first nanostructures and second nanostructures over a substrate. The method also includes forming a first metal gate layer surrounding the first nanostructures and over the first nanostructures and the second nanostructures. The method also includes etching back the first metal gate layer over the first nanostructures and the second nanostructures. The method also includes removing the first metal gate layer over the second nanostructures. The method also includes forming a second metal gate layer surrounding the second nanostructures and over the first nanostructures and the second nanostructures.