Taoyuan, Taiwan

Wen-Yao Yang

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Yao Yang. Retrieved from https://idiyas.com/inventor/wen-yao-yang-yl7u370y

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 11.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Wen-Yao Yang in Semiconductor Technology

Introduction

Wen-Yao Yang is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device structure.

Latest Patents

Wen-Yao Yang holds 1 patent for a semiconductor device structure and method for forming the semiconductor device structure. This patent describes a method that includes forming first and second nanostructures over a substrate. The process involves creating a first metal gate layer that surrounds the first nanostructures and etching back this layer. Additionally, the method includes removing the first metal gate layer over the second nanostructures and forming a second metal gate layer surrounding the second nanostructures.

Career Highlights

Wen-Yao Yang is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has been instrumental in advancing semiconductor technologies.

Collaborations

Wen-Yao Yang collaborates with Chia-Wei Chen, who is also a notable figure in the field. Their partnership has fostered innovation and development in semiconductor research.

Conclusion

Wen-Yao Yang's contributions to semiconductor technology exemplify the importance of innovation in this rapidly evolving field. His patent and collaborative efforts continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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