The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Feb. 25, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Cheng-Ta Wu, Chiayi County, TW;
Yung-Yu Wang, Hsinchu, TW;
Yung-Hsiang Chan, Hsinchu, TW;
Chia-Ying Tsai, Hsinchu, TW;
Ting-Chun Wang, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A fin-type field effect transistor comprising a substrate, at least one gate structure, spacers and strained source and drain regions is described. The at least one gate structure is disposed over the substrate and on the isolation structures. The spacers are disposed on sidewalls of the at least one gate structure. First blocking material layers are disposed on the spacers. The strained source and drain regions are disposed at two opposite sides of the at least one gate structure. Second blocking material layers are disposed on the strained source and drain regions. The first and second blocking material layers comprise oxygen-rich oxide materials.